The oxidation and magnetic properties of MP recording media particles

MP recording media pigments have been subjected to elevated temperatures of 180(C in air at various rates of heating from room temperature. It has been found that the rate of heating of these particles determines the final oxide which the particles form. Analysis of the switching field distribution (SFD) of such particles before and after oxidation shows a broadening of the SFD to lower switching fields. A comparative analysis with X-ray spectra performed on the oxidized particles indicates that particles with lower values of coercivity have been oxidized preferentially

Measurement of the energy barrier distribution in the antiferromagnetic layer of exchange-biased materials

The value of exchange field of two FeMn–NiFeCobased spin valves with varying thickness of the pinned ferromagnetic layer has been determined as a function of temperature. The complexities caused by thermal activation of the antiferromagnet during measurement have been overcome by the development of a measurement protocol. The values of the exchange field obtained provide a measure of the degree of order in the antiferromagnet. Thus it is possible to determine the distribution of energy barriers to reversal for the system. We find that for a 110-A -thick pinned NiFeCo layer a broad distribution exists, whereas for an 80-A layer, the distribution is bimodal and has a component subject to thermal activation at temperatures down to 260 K

Magnetization reversal in AFC media

In this paper, we report on a study of magnetization reversal processes in antiferromagnetically coupled media. We describe the reversal in terms of the reversible and irreversible susceptibility that has been measured for the CoCrPtB system of fixed-recording layer thickness and variable-stabilization layer thickness. We rind that very thin stabilization layers do not couple strongly to the recording layer, and that for Mrt greater than 0.11 memu/cm(2), some of the change in magnetization becomes irreversible

The role of interfaces in CoFe/IrMn exchange biased systems

A trilayer system consisting of an IrMn layer exchanged coupled to two CoFe layers of equal thickness has been studied. A single stage reversal was observed over a wide range of temperatures. Two bilayers with the same thicknesses of the pinning layer but different ferromagnetic thicknesses were also studied. By comparing the magnetic properties of these three stacks the effect of the interfacial area on the exchange field and the coercivity has been determined. We find that the interfacial area has a very minor effect on the exchange field H-ex and the blocking temperature (T-B) but causes a doubling of the coercivity (H-c). This indicates that H-c is dominated by the interface whereas the exchange bias is controlled by volumetric effects

Thermally activated reversal in exchange-coupled structures

In this paper, we study the thermally activated reversal of IrMn/CoFe exchange-coupled structures using Lorentz microscopy and magnetometry. An asymmetry and a training effect were found on the hysteresis loops both with and without holding the film at negative saturation of the ferromagnetic layer. Holding the film at negative saturation results in the hysteresis loop shifting toward zero field. We believe that, in this system, two energy barrier distributions with different time constants coexist. The large-time-constant thermally activated reversal of the antiferromagnetic layer contributes to a increasing shift of the entire hysteresis loop toward zero field with increased period of time spent at negative saturation of the ferromagnetic layer. The small-time-constant thermal activation contributes to asymmetry in the magnetization reversal and training effects

Activation volumes in CoPtCr-SiO2 perpendicular recording media

CoPtCr-SiO2 perpendicular recording media with varying levels of SiO2 were examined by two different methods to determine the activation volume. The first is based on the sweep-rate dependence of the remanence coercivity using Sharrock's equation. The second is based on the measurement of the fluctuation field from time-dependence data, determined using a magneto-optical Kerr effect (MOKE) magnetometer. The values of V-act measured at the coercivity for both methods are almost the same, with the fluctuation field and activation volumes increasing with the SiO2 content. The difference between V-act and the grain volume measured directly from bright-field TEM images decreases as the SiO2 content increases due to the reduction of intergranular exchange coupling. The experimental results indicate that values of V-act obtained from single- and double-layered media are consistent. It was also found that the coercivity and normalized hysteresis loop slope at coercivity varied with SiO2 content, with the coercivity peaking at 8 at % SiO2 (nearly 26 vol% SiO2)

Determination of activation volumes of reversal in perpendicular media

We discuss a method for the determination of activation volumes of reversal in perpendicular media. This method does not require correction for the self-demagnetizing field normally associated with these media. This is achieved by performing time dependence measurements at a constant level of magnetization. From the difference in time taken for the magnetization to decay to a fixed value at two fields-separated by a small increment DeltaH, the activation volume can be determined. We report data for both CoCrPt alloy films and a multilayer film, typical of those materials under consideration for use as perpendicular media. We find activation volumes that are consistent with the hysteresis curves of the materials. The activation volume scales qualitatively with the exchange coupling. The alloy films have significantly lower activation volumes, implying that they would be capable of supporting a higher data density

Novel sputtering-technology for grain-size control

In this paper, we present a description of a novel high-rate plasma sputtering system that allows the control of grain size in sputtered films. Additionally, the system has the advantage of a better utilization of the target material (around 80% to 90%) by eliminating the race track at the target as in conventional plasma magnetron sputtering systems. The potential and capabilities of this novel plasma sputtering device are demonstrated in this paper by the deposition of a number of different Cr thin films suitable for underlayers in thin-film media and for which we have performed a systematic X-ray and TEM analysis to determine the grain-size histograms, mean grain diameters, and their relationship to the sputtering processes

Growth rate effects in soft CoFe films

We report on growth rate effects in sputter-deposited CoFe films prepared using high target utilization sputtering technology (HiTUS). We find that the grain structure of these polycrystalline films is closely related to the growth rate. By changing the growth rate, samples were prepared with different grain structure, which in turn had the effect of changing the magnetic properties of the films. We demonstrate control of the coercivity, which varied by a factor of more than ten. This was achieved via grain size control in CoFe films of thickness 20 nm. Furthermore, by employing a two-step sputtering process, in which two extreme growth rates are used sequentially, we were able to tune the saturation magnetization